X-Feed Billboard (International)
The newsboard processes news from the NASDAQ Nordic portfolio company GlobeNewswire, which provides investors with company-relevant information. This relates in particular to events that may be relevant to the listing of companies or tradable financial instruments.
GlobNewswire (formerly PrimeNewswire) specializes in public relations solutions and digital media services. This feed adds another important source of information for investors to the popular X-Billboard portfolio.
Santa Clara, CA and Kyoto, Japan, May 22, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced an expanded portfolio of surface-mount near-infrared (NIR) LEDs with new compact top-view types optimized for applications such as VR/AR devices, industrial optical sensors, and human detection sensors.
Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, has adopted Semikron Danfoss’ Module featuring ROHM’s latest 2kV SiC MOSFETs for its new large-scale power conversion solution “Sunny Central FLEX.” This modular platform is designed to streamline and enhance grid connections for photovoltaic installations, battery storage systems, and emerging technologies.
Compact high heat dissipation design sets a new standard for OBCs
Santa Clara, CA and Kyoto, Japan, April 17, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they will participate in PCIM Expo and Conference, the leading international event for power electronics, Intelligent motion, renewable energy and energy management, taking place in Nuremberg, Germany May 6 - 8, 2025. ROHM will exhibit at booth 304 in hall 9, where they will showcase reference projects with renowned partners and present the evolution of its package designs and evaluation boards.
Santa Clara, CA and Kyoto, Japan, April 10, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.
8-inch design combines an industry-leading 11.67mm height with 7.2V drive for energy-efficient printing
Santa Clara, CA and Kyoto, Japan, March 12, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor U.S.A., LLC, today announced they will participate in APEC 2025, the premier power electronics conference and exposition that brings together power electronics professionals, academics, and students from all over the world. The event will be held from March 16th to 20th in Atlanta, GA.
TOLL package 650V GaN HEMTs contribute to improving power supply efficiency
Accelerating development towards the mass production of GaN devices for automotive applications
Low-capacitance design prevents signal degradation, while high surge current rating provides enhanced protection for automotive electronic devices
Achieves equivalent rated power in a smaller size with guaranteed stable long-term supply
Delivers an authentic listening experience by expressing the three elements of spatial reverberation, quietness, and dynamic range while preserving the natural “texture” of musical instruments
Price range is less than one-tenth that of conventional devices while achieving remarkable space-savings
125W × 8ch high-power array significantly improves measurement distance and resolution in LiDAR applications
Shipments to European automakers scheduled to begin in 2025
Santa Clara, CA and Kyoto, Japan, Dec. 10, 2024 (GLOBE NEWSWIRE) -- ROHM Co., Ltd. (ROHM) today announced that they have entered into a strategic partnership with TSMC on the development and volume production of gallium nitride (GaN) power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.
Santa Clara, CA and Kyoto, Japan, Dec. 04, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its EcoSiC™ products, including SiC MOSFETs and SiC Schottky barrier diodes (SBDs) in the HFA/HCA series of 3.5kW output AC-DC power supply units for 3-phase applications from COSEL, a leading power supply manufacturer in Japan. Incorporating ROHM’s SiC MOSFETs and SiC SBDs into the forced-air-cooled HFA series and conduction-cooled HCA series achieves up to 94% efficiency. The HCA series has been mass produced since 2023, while the HFA series began mass production in 2024.
Santa Clara, CA and Kyoto, Japan, Nov. 26, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor and Valeo, a leading automotive technology company, today announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.
Achieves approximately 1.3 times the creepage distance compared to standard products
Contributes to higher efficiency in automotive electric compressors and industrial equipment inverters
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